US Patent Issued to Wolfspeed on Sept. 1 for "Semiconductor die having a drift region with a charge compensation region formed therein where the charge compensation region has a plurality of guard rings formed in a first and a second opposite doping type portions" (North Carolina Inventors)

Posted On: 2026-09-01

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,194, issued on Sept. 1, was assigned to Wolfspeed Inc. (Durham, N.C.). "Semiconductor die having a drift region with a charge compensation ... Read More

US Patent Issued to ROHM on Sept. 1 for "Semiconductor device with groove structure" (Japanese Inventor)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,195, issued on Sept. 1, was assigned to ROHM Co. LTD. (Kyoto, Japan). "Semiconductor device with groove structure" was invented by Kentaro ... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 1 for "Method for manufacturing semiconductor structure with thin film transistor" (Belgian, Taiwanese Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,196, issued on Sept. 1, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Method for manufacturing semico... Read More

US Patent Issued to WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY on Sept. 1 for "Thin film transistor and electronic device thereof" (Chinese Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,197, issued on Sept. 1, was assigned to WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY Co. LTD. (Wuhan, China). "Thin film transistor and elec... Read More

US Patent Issued to Powerchip Semiconductor Manufacturing on Sept. 1 for "High frequency transistor" (Taiwanese Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,198, issued on Sept. 1, was assigned to Powerchip Semiconductor Manufacturing Corp. (Hsinchu, Taiwan). "High frequency transistor" was inve... Read More

US Patent Issued to SAMSUNG ELECTRONICS on Sept. 1 for "Semiconductor devices" (South Korean Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,199, issued on Sept. 1, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor devices" was invented by Jungg... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 1 for "Transistor, semiconductor device, and semiconductor structure" (Taiwanese Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,200, issued on Sept. 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Transistor, semiconductor device, a... Read More

US Patent Issued to Century Technology (Shenzhen) on Sept. 1 for "Thin film transistor, thin film transistor array substrate and method of manufacturing thin film transistor" (Taiwanese, Chinese Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,201, issued on Sept. 1, was assigned to Century Technology (Shenzhen) Corporation Limited (Shenzhen, China). "Thin film transistor, thin fi... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 1 for "Integrated circuit and formation method thereof" (Taiwanese Inventor)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,202, issued on Sept. 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Integrated circuit and formation me... Read More

US Patent Issued to Fujian Jinhua Integrated Circuit on Sept. 1 for "Semiconductor device and fabricating method thereof" (Chinese Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,203, issued on Sept. 1, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou City, China). "Semiconductor device and fabrica... Read More

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US Patent Issued to Wolfspeed on Sept. 1 for "Semiconductor die having a drift region with a charge compensation region formed therein where the charge compensation region has a plurality of guard rings formed in a first and a second opposite doping type portions" (North Carolina Inventors)

US Patent Issued to ROHM on Sept. 1 for "Semiconductor device with groove structure" (Japanese Inventor)

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 1 for "Method for manufacturing semiconductor structure with thin film transistor" (Belgian, Taiwanese Inventors)

US Patent Issued to WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY on Sept. 1 for "Thin film transistor and electronic device thereof" (Chinese Inventors)

US Patent Issued to Powerchip Semiconductor Manufacturing on Sept. 1 for "High frequency transistor" (Taiwanese Inventors)

US Patent Issued to SAMSUNG ELECTRONICS on Sept. 1 for "Semiconductor devices" (South Korean Inventors)

US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 1 for "Transistor, semiconductor device, and semiconductor structure" (Taiwanese Inventors)

US Patent Issued to Century Technology (Shenzhen) on Sept. 1 for "Thin film transistor, thin film transistor array substrate and method of manufacturing thin film transistor" (Taiwanese, Chinese Inventors)

US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 1 for "Integrated circuit and formation method thereof" (Taiwanese Inventor)

US Patent Issued to Fujian Jinhua Integrated Circuit on Sept. 1 for "Semiconductor device and fabricating method thereof" (Chinese Inventors)